Open AccessАнтиструктурные дефекты в полупроводниковых стеклах Ge-Te и Ge-As-Te
Author(s) -
А. В. Марченко,
П. П. Серегин,
Е. И. Теруков,
К. Б. Шахович
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.05.47570.9032
Subject(s) - germanium , tellurium , tin , mössbauer spectroscopy , germanium compounds , crystallography , materials science , isotopes of germanium , chemistry , metallurgy , silicon , physics , electron , nuclear physics , internal conversion
The formation of antisite defects in Ge_20Te_80 and Ge_15As_4Te_81 vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the ^119 mm Sn(^119 m Sn), ^119 m Te(^119 m Sn), ^125Sn(^125Te), and ^125 m Te(^125Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.