Open AccessОб оценках электронного сродства политипов карбида кремния и разрывов зон в гетеропереходах на их основе
Author(s) -
С.Ю. Давыдов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.05.47568.8995
Subject(s) - simple (philosophy) , ab initio , diagram , band diagram , electronic band structure , heterojunction , statistical physics , theoretical physics , condensed matter physics , materials science , physics , computational physics , computational chemistry , quantum mechanics , mathematics , chemistry , statistics , philosophy , epistemology
Two different procedures for estimating the electron affinity of SiC polytypes and the interrelation of these procedures with the results of ab initio calculations are discussed. Simple corrections to the Shockley–Anderson rules for the constructions of band diagrams of heterojunctions are proposed.