Open AccessПараметры зонной структуры тонких пленок Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0≤ x≤ 0.15) на подложках с различным температурным расширением
Author(s) -
A. V. Suslov,
В. М. Грабов,
В. А. Комаров,
Е. В. Демидов,
С. В. Сенкевич,
M. V. Suslov
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.05.47549.07
Subject(s) - thermal expansion , valence (chemistry) , materials science , bismuth , thin film , antimony , condensed matter physics , semimetal , thermal conduction , conduction band , valence band , analytical chemistry (journal) , substrate (aquarium) , band gap , chemistry , optoelectronics , nanotechnology , composite material , physics , metallurgy , oceanography , organic chemistry , chromatography , quantum mechanics , geology , electron
The report presents the positions of the conductanceand valence band extremes in relation to the chemical potentialof the thin bismuth–antimony films (from 0 to 15 at% Sb) onsubstrates with different thermal expansion. The results are basedon the galvanomagnetic properties study of thermal depositedthin films. A significant increase in the concentration of chargecarriers in films on substrates with a large thermal expansionwas found. The results of calculating the valence band and theconduction band positions at 77 K, depending on the thermalexpansion coefficient of the substrate used, are presented. Thethin films plane deformation caused by the difference in the filmand substrate materials thermal expansion leads to a change in thepositions of the conduction band and the valence band of the filmsrelative to their positions in a single crystal with correspondingcomposition