Open AccessЭффекты Холла и Зеебека в тонких пленках висмута на подложке из слюды в диапазоне температур 77-300 K
Author(s) -
В.А. Комаров,
В.М. Грабов,
А.В. Суслов,
Н.С. Каблукова,
М.В. Суслов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.05.47545.03
Subject(s) - bismuth , hall effect , scattering , condensed matter physics , materials science , anisotropy , seebeck coefficient , electron mobility , carrier scattering , crystal (programming language) , thermoelectric effect , mica , electrical resistivity and conductivity , optics , physics , thermodynamics , composite material , thermal conductivity , metallurgy , quantum mechanics , computer science , programming language
The effects of film thickness and block size on the Hall and Seebeck effects in bismuth films on mica substrates are analyzed using experimental data. A preferential decrease in the electron contribution with a decrease in the film thickness and a preferential decrease in the hole contribution with a decrease in the block size are established. The Hall and Seebeck coefficients are calculated using the classical size effect with regard to carrier scattering at block boundaries and anisotropy of the properties of carriers. In the calculation, the electron and hole mobility components and their concentration in a bismuth single crystal are used and the crystallographic orientation of the film crystal are taken into account. The results of the calculation are in good agreement with the experimental data. It is concluded that the value and sign of the Hall and Seebeck coefficients in bismuth films are determined by the competition of the classical size effect and scattering at block boundaries.