Open AccessВлияние никеля и меди, введенных при комнатной температуре, на рекомбинационные свойства протяженных дефектов в кремнии
Author(s) -
В. И. Орлов,
Н.А. Ярыкин,
Е.Б. Якимов
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47672.9020
Subject(s) - dislocation , recombination , copper , nickel , materials science , electron beam induced current , silicon , polishing , cathode ray , diffusion , electron , condensed matter physics , crystallography , metallurgy , chemistry , thermodynamics , composite material , physics , nuclear physics , biochemistry , gene
The change in the recombination properties of individual dislocations and dislocation trails in silicondue to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature isstudied by the electron-beam- and light-beam-induced current techniques. It is found that the introductionof nickel results in an increase in the recombination activity of both dislocations and dislocation trails. Theintroduction of copper does not induce any substantial change in the contrast of extended defects.