Влияние никеля и меди, введенных при комнатной температуре, на рекомбинационные свойства протяженных дефектов в кремнии

The change in the recombination properties of individual dislocations and dislocation trails in silicondue to the diffusion of nickel and copper during chemical-mechanical polishing at room temperature isstudied by the electron-beam- and light-beam-induced current techniques. It is found that the introductionof nickel results in an increase in the recombination activity of both dislocations and dislocation trails. Theintroduction of copper does not induce any substantial change in the contrast of extended defects.