Open AccessПолучение пористого кремния путем спекания нанопорошка
Author(s) -
Е.В. Астрова,
В.Б. Воронков,
А.В. Нащекин,
А.В. Парфеньева,
Д.А. Ложкина,
М.В. Томкович,
Ю.А. Кукушкина
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47455.9019
Subject(s) - materials science , sintering , wafer , microstructure , silicon , annealing (glass) , porosity , porous silicon , conductivity , composite material , metallurgy , nanotechnology , chemistry
The technique of the electrochemical and photoelectrochemical etching of single-crystal silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and costly. An alternative method for forming bulk macroporous silicon is the high-temperature sintering of Si powder. The process of nanopowder sintering preliminarily subjected to dry cold compression (without binding additives) is investigated. The properties of the sintered material, including its microstructure, density, and electrical conductivity, are studied at different annealing temperature and time. Techniques for changing the porosity of the sintered samples and for determining of the interior surface area are discussed.