Open AccessВлияние материала подложки на свойства пленок оксида галлия и структур на его основе
Author(s) -
В.М. Калыгина,
Т.З. Лыгденова,
Ю. С. Петрова,
Е.В. Черников
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47442.8990
Subject(s) - materials science , gallium , semiconductor , annealing (glass) , conductivity , optoelectronics , oxide , electrical resistivity and conductivity , analytical chemistry (journal) , chemistry , composite material , metallurgy , electrical engineering , chromatography , engineering
The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n ( p )-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of Ga_2O_3– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of Ga_2O_3/ p -GaAs samples before annealing, a region of N -type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode.