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Влияние фазового перехода второго рода на электропроводность структуры металл/полупроводник
Author(s) -
И.Р. Набиуллин,
Р.М. Гадиев,
А.Н. Лачинов
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47439.9021
Subject(s) - antiferromagnetism , chromium , condensed matter physics , paramagnetism , phase transition , materials science , electrical resistivity and conductivity , phase (matter) , fermi level , electron , chemistry , physics , metallurgy , organic chemistry , quantum mechanics
The properties of the Cr– p -Si potential barrier near the temperature of the antiferromagnetic–paramagnetic phase transition in chromium are investigated. A significant change in the potential barrier and an anomalous increase in the conductivity in the Cr– p -Si–Au structure are observed near the temperature of the second-order antiferromagnetic–paramagnetic phase transition in chromium. It is established that current fluctuations in the structure are enhanced when approaching the phase-transition point. The experimental results are interpreted based on the assumption that the observed change in the electron-transport properties of the Cr–Si interface is due to a shift of the Fermi quasi-level in chromium as a result of the second-order phase transition.

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