Open AccessЭволюция микролунок на широких террасах поверхности Si(111) в процессе высокотемпературного отжига
Author(s) -
А.С. Петров,
С.В. Ситников,
С.С. Косолобов,
А.В. Латышев
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47438.9008
Subject(s) - nucleation , annealing (glass) , materials science , vacancy defect , kinetic energy , focused ion beam , in situ , condensed matter physics , ion , crystallography , chemistry , metallurgy , physics , organic chemistry , quantum mechanics
We have investigated in situ the morphological transformation of the Si(111) surfaces with micro-pits at large terraces during high-temperature annealing at T = 1200–1400°C. Experimental observation of the micro-pits kinetic decay have been performed by means of ultrahigh vacuum reflection electron microscopy. Focused ion beam system have been used for micro-pits creation at Si(111) terraces of large size. We have found that kinetic of micro-pit decay processes is affected by two dimensional vacancy islands nucleation at the micro-pit bottom when the micro-pit reaches the critical lateral size. The simple theoretical model has been proposed for describing the changes of the lateral size of micro-pit. The temperature dependence of two-dimensional vacancy islands nucleation frequency at micro-pit bottom is found to be described by the activation energy of 4.1 ± 0.1 eV.