Open AccessВремя жизни неравновесных носителей заряда в полупроводниках с близкими значениями запрещенной зоны и спин-орбитального отщепления
Author(s) -
Н.Л. Баженов,
К.Д. Мынбаев,
А.А. Семакова,
Г.Г. Зегря
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2019.04.47437.9004
Subject(s) - radiative transfer , auger effect , recombination , band gap , auger , charge carrier , atomic physics , physics , spontaneous emission , condensed matter physics , charge (physics) , materials science , chemistry , optics , quantum mechanics , laser , biochemistry , gene
Expressions for the Auger- and radiative-recombination rates are derived in terms of Kane’s model for materials with a band-gap width close to the spin-orbit splitting energy, which is the case for InAs, InAsSb solid solutions, etc. Our results are compared with simplified expressions for recombination rates, frequently used in publications. It is shown that the nonparabolicity of the electronic structure should be taken into account in calculations of the recombination rates. As an example, the temperature dependences of the charge-carrier lifetimes governed by radiative and non-radiative processes are calculated for InAsSb solid solutions.