Open AccessЭДС, возникающая в p-n-переходе при воздействии сильного СВЧ поля и света
Author(s) -
Г. Гулямов,
У.И. Эркабоев,
Н.Ю. Шарибаев,
А.Г. Гулямов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.03.47293.8913
Subject(s) - electromotive force , physics , current (fluid) , electromagnetic field , microwave , internal resistance , electromagnetic radiation , diode , counter electromotive force , electrical engineering , voltage , engineering , optoelectronics , optics , power (physics) , thermodynamics , quantum mechanics , battery (electricity)
AbstractThe effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p – n junction placed into a strong microwave (UHF) electromagnetic field.