ЭДС, возникающая в p-n-переходе при воздействии сильного СВЧ поля и света | Zendy

Г. Гулямов | Zendy; У.И. Эркабоев | Zendy; Н.Ю. Шарибаев | Zendy; А.Г. Гулямов | Zendy

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ЭДС, возникающая в p-n-переходе при воздействии сильного СВЧ поля и света

Author(s) -

Г. Гулямов,

У.И. Эркабоев,

Н.Ю. Шарибаев,

А.Г. Гулямов

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.03.47293.8913

Subject(s) - electromotive force , physics , current (fluid) , electromagnetic field , microwave , internal resistance , electromagnetic radiation , diode , counter electromotive force , electrical engineering , voltage , engineering , optoelectronics , optics , power (physics) , thermodynamics , quantum mechanics , battery (electricity)

The effect of a strong electromagnetic field on currents and electromotive forces in a p – n junction is considered. It is shown that a p – n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p – n junction placed into a strong microwave (UHF) electromagnetic field.

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