Open AccessЭлектронный квантовый транспорт в псевдоморфных и метаморфных квантовых ямах на основе In-=SUB=-0.2-=/SUB=-Ga-=SUB=-0.8-=/SUB=-As
Author(s) -
А.Н. Виниченко,
Д.А. Сафонов,
Н.И. Каргин,
И.С. Васильевский
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.03.47288.9001
Subject(s) - high electron mobility transistor , metamorphic rock , scattering , condensed matter physics , quantum well , relaxation (psychology) , materials science , doping , transistor , electron mobility , electron , impurity , optoelectronics , heterojunction , chemistry , physics , optics , geology , psychology , social psychology , laser , geochemistry , organic chemistry , quantum mechanics , voltage
Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In_0.2Ga_0.8As/In_0.2Al_0.8As quantum wells (0.7 eV for Γ electrons) with different metamorphic buffer designs are implemented and investigated for the first time. The electronic properties of metamorphic and pseudomorphic HEMT structures with the same doping are compared. It is found that, over a temperature range of 4–300 K, both the electron mobility and concentration in the HEMT structure with a linear metamorphic buffer are higher than those in the pseudomorphic HEMT structure due to an increase in the depth of the quantum well. Low-temperature magnetotransport measurements demonstrate that the quantum momentum-relaxation time decreases considerably in metamorphic HEMT structures because of enhanced small-angle scattering resulting from structural defects and inhomogeneities, while the dominant scattering mechanism in structures of both types is still due to remote ionized impurities.