Open AccessИзменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ
Author(s) -
В. В. Привезенцев,
В. С. Куликаускас,
В.А. Скуратов,
О. С. Зилова,
А. А. Бурмистров,
М. Ю. Пресняков,
А.В. Горячев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.03.47284.8979
Subject(s) - zinc , fluence , irradiation , materials science , analytical chemistry (journal) , ion , transmission electron microscopy , scanning electron microscope , secondary ion mass spectrometry , mass spectrometry , radiochemistry , wafer , oxide , chemistry , metallurgy , nanotechnology , physics , organic chemistry , chromatography , nuclear physics , composite material
ingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.