Open AccessРаспад твердого раствора межузельного магния в кремнии
Author(s) -
В.Б. Шуман,
А.Н. Лодыгин,
Л.М. Порцель,
А.А. Яковлева,
Nikolai V. Abrosimov,
Ю.А. Астров
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.03.47280.9005
Subject(s) - activation energy , annealing (glass) , electrical resistivity and conductivity , silicon , materials science , analytical chemistry (journal) , doping , supersaturation , decomposition , quenching (fluorescence) , magnesium , chemistry , metallurgy , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics , electrical engineering , fluorescence , engineering
The decomposition of a solid solution of interstitial magnesium Mg_ i in silicon is studied. Float-Zone dislocation-free single-crystal n -Si with a resistivity of ~8 × 10^3 Ω cm and oxygen and carbon contents of ~5 × 10^14 cm^–3 and ~1 × 10^15 cm^–3 is used in the experiments. The samples are doped using the diffusion sandwich method at T =1100°C followed by quenching. Decomposition of the supersaturated Mg_ i solid solution is studied by observing the kinetics of increasing the resistivity of doped samples resulting from their annealing in the range T = 400–620°C. It is found that the decomposition is characterized by an activation energy of E _ a ≈ 1.6 eV, which is close to the previously determined diffusion activation energy of Mg_ i in silicon. It is also shown that Si:Mg exhibits stable properties at temperatures not exceeding 400°C, which is important for its possible practical application.