Open AccessОчистка от оксидов поверхности пластин полупроводника InSb для создания латеральных спиновых клапанов
Author(s) -
N. A. Viglin,
И.В. Грибов,
В.М. Цвелиховская,
Е. И. Патраков
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47113.8906
Subject(s) - wafer , materials science , semiconductor , fabrication , annealing (glass) , ion , optoelectronics , oxide , surface roughness , dry etching , etching (microfabrication) , surface finish , nanotechnology , chemistry , composite material , metallurgy , layer (electronics) , medicine , alternative medicine , organic chemistry , pathology
The formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb plates as well as a variation in their roughness depending on the power supplied to ion etching devices are investigated. The degree of oxidation of the semiconductor surface exposed to air after ion cleaning and annealing in molecular hydrogen are evaluated. Based on comparison of the efficiency of spin injection in devices formed with semiconductors subjected to various types of treatment, a conclusion is made about the parameters of optimal preparation of the surface of the InSb wafers for the fabrication of lateral spin devices.