Open AccessИсследование возможности изготовления напряженных сверхрешеток InAs/GaSb методом газофазной эпитаксии из металлоорганических соединений
Author(s) -
Roy Levin,
V. N. Nevedomskiy,
N. L. Bazhenov,
Г.Г. Зегря,
B. V. Pushnyĭ,
М. Н. Мизеров
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47112.8946
Subject(s) - superlattice , metalorganic vapour phase epitaxy , heterojunction , materials science , optoelectronics , chemical vapor deposition , electroluminescence , layer (electronics) , deposition (geology) , spectral line , wavelength , nanotechnology , epitaxy , paleontology , physics , astronomy , sediment , biology
The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5 . 0 μm (0 . 25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.