Исследование возможности изготовления напряженных сверхрешеток InAs/GaSb методом газофазной эпитаксии из металлоорганических соединений | Zendy

R. V. Levin | Zendy; В. Н. Неведомский | Zendy; N. L. Bazhenov | Zendy; Г.Г. Зегря | Zendy; B. V. Pushnyĭ | Zendy; М. Н. Мизеров | Zendy

Open Access

Исследование возможности изготовления напряженных сверхрешеток InAs/GaSb методом газофазной эпитаксии из металлоорганических соединений

Author(s) -

R. V. Levin,

В. Н. Неведомский,

N. L. Bazhenov,

Г.Г. Зегря,

B. V. Pushnyĭ,

М. Н. Мизеров

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.02.47112.8946

Subject(s) - superlattice , metalorganic vapour phase epitaxy , heterojunction , materials science , optoelectronics , chemical vapor deposition , electroluminescence , layer (electronics) , deposition (geology) , spectral line , wavelength , nanotechnology , epitaxy , paleontology , physics , astronomy , sediment , biology

The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5 . 0 μm (0 . 25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research