Низкотемпературные омические контакты на основе Ta/Al к гетероэпитаксиальным структурам AlGaN/GaN на кремниевых подложках | Zendy

E. V. Erofeev | Zendy; �. I. Fedin | Zendy; V. V. Fedina | Zendy; А.П. Фазлеев | Zendy

Open Access

Низкотемпературные омические контакты на основе Ta/Al к гетероэпитаксиальным структурам AlGaN/GaN на кремниевых подложках

Author(s) -

E. V. Erofeev,

�. I. Fedin,

V. V. Fedina,

А.П. Фазлеев

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.02.47108.8870

Subject(s) - ohmic contact , annealing (glass) , materials science , contact resistance , optoelectronics , silicon , enhanced data rates for gsm evolution , morphology (biology) , nitrogen , nanotechnology , metallurgy , chemistry , layer (electronics) , telecommunications , organic chemistry , biology , computer science , genetics

The formation features of a low-temperature Ta/Al-based ohmic contact to Al_0.25Ga_0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.

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