Open AccessНизкотемпературные омические контакты на основе Ta/Al к гетероэпитаксиальным структурам AlGaN/GaN на кремниевых подложках
Author(s) -
E. V. Erofeev,
I. Fedin,
V. V. Fedina,
А.П. Фазлеев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47108.8870
Subject(s) - ohmic contact , annealing (glass) , materials science , contact resistance , optoelectronics , silicon , enhanced data rates for gsm evolution , morphology (biology) , nitrogen , nanotechnology , metallurgy , chemistry , layer (electronics) , telecommunications , organic chemistry , biology , computer science , genetics
The formation features of a low-temperature Ta/Al-based ohmic contact to Al_0.25Ga_0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.