Влияние концентрации водорода на фототок диодов Шоттки Pd/n-InP | Zendy

E. A. Grebenshchikova | Zendy; V. G. Sidorov | Zendy; V. A. Shutaev | Zendy; Ю.П. Яковлев | Zendy

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Влияние концентрации водорода на фототок диодов Шоттки Pd/n-InP

Author(s) -

E. A. Grebenshchikova,

V. G. Sidorov,

V. A. Shutaev,

Ю.П. Яковлев

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.02.47107.8967

Subject(s) - photocurrent , schottky diode , hydrogen , materials science , diode , analytical chemistry (journal) , photoconductivity , light intensity , optoelectronics , optics , chemistry , physics , chromatography , organic chemistry

The variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H_2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.

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