Open AccessВлияние концентрации водорода на фототок диодов Шоттки Pd/n-InP
Author(s) -
Е. А. Гребенщикова,
V. G. Sidorov,
V. A. Shutaev,
Ю.П. Яковлев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47107.8967
Subject(s) - photocurrent , schottky diode , hydrogen , materials science , diode , analytical chemistry (journal) , photoconductivity , light intensity , optoelectronics , optics , chemistry , physics , chromatography , organic chemistry
The variation rate of the short-circuit photocurrent of Pd/ n -InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H_2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/ n -InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.