Терморезистивный полупроводниковый SiC/Si-композиционный материал | Zendy

S. K. Brantov | Zendy; Е.Б. Якимов | Zendy

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Терморезистивный полупроводниковый SiC/Si-композиционный материал

Author(s) -

S. K. Brantov,

Е.Б. Якимов

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.02.47104.8962

Subject(s) - materials science , thermistor , silicon carbide , foil method , silicon , composite material , crystallite , layer (electronics) , thermal , carbon fibers , composite number , atmospheric temperature range , polycrystalline silicon , optoelectronics , metallurgy , electrical engineering , physics , meteorology , engineering , thin film transistor

A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.

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