Open AccessТерморезистивный полупроводниковый SiC/Si-композиционный материал
Author(s) -
S. K. Brantov,
Е. Б. Якимов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47104.8962
Subject(s) - materials science , thermistor , silicon carbide , foil method , silicon , composite material , crystallite , layer (electronics) , thermal , carbon fibers , composite number , atmospheric temperature range , polycrystalline silicon , optoelectronics , metallurgy , electrical engineering , physics , meteorology , engineering , thin film transistor
A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.