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Дискриминация поперечных мод в торцевых полупроводниковых лазерах с пространственной модуляцией отражения выходных зеркал
Author(s) -
Н.Ю. Гордеев,
А.С. Паюсов,
И.С. Мухин,
А.А. Серин,
М.М. Кулагина,
Ю.А. Гусева,
Ю.М. Шерняков,
Ю.М. Задиранов,
М.В. Максимов
Publication year - 2019
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47100.8971
Subject(s) - materials science , optoelectronics , reflection (computer programming) , etching (microfabrication) , facet (psychology) , laser , diode , optics , coating , quantum dot , deposition (geology) , enhanced data rates for gsm evolution , nanotechnology , layer (electronics) , physics , computer science , telecommunications , psychology , social psychology , paleontology , personality , sediment , big five personality traits , programming language , biology
A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.

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