Open AccessОсобенности свойств редкоземельных полупроводников
Author(s) -
В.В. Каминский,
Н.В. Шаренкова
Publication year - 2019
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47091.8893
Subject(s) - rare earth , ionization , materials science , semiconductor , atomic physics , physics , metallurgy , optoelectronics , quantum mechanics , ion
It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4 f shells in the electronic structure of the elements.
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