Open AccessИсточники спонтанного излучения на основе арсенида индия (обзор: десять лет спустя)
Author(s) -
С.А. Карандашев,
B. A. Matveev,
М.А. Ременный
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.02.47090.8799
Subject(s) - optoelectronics , diode , materials science , epitaxy , heterojunction , light emitting diode , vapor phase , quantum efficiency , nanotechnology , physics , layer (electronics) , thermodynamics
The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L – I and I – V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.