Источники спонтанного излучения на основе арсенида индия (обзор: десять лет спустя) | Zendy

С.А. Карандашев | Zendy; B. A. Matveev | Zendy; М.А. Ременный | Zendy

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Источники спонтанного излучения на основе арсенида индия (обзор: десять лет спустя)

Author(s) -

С.А. Карандашев,

B. A. Matveev,

М.А. Ременный

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.02.47090.8799

Subject(s) - optoelectronics , diode , materials science , epitaxy , heterojunction , light emitting diode , vapor phase , quantum efficiency , nanotechnology , physics , layer (electronics) , thermodynamics

The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L – I and I – V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.

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