Осаждение пленок кремния, легированных бором и фосфором газоструйным плазмохимическим методом | Zendy

В.Г. Щукин | Zendy; Р.Г. Шарафутдинов | Zendy; В.О. Константинов | Zendy

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Осаждение пленок кремния, легированных бором и фосфором газоструйным плазмохимическим методом

Author(s) -

В.Г. Щукин,

Р.Г. Шарафутдинов,

В.О. Константинов

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.01.47000.8917

Subject(s) - diborane , materials science , silicon , crystallinity , doping , conductivity , amorphous solid , dopant , boron , amorphous silicon , analytical chemistry (journal) , chemical engineering , crystalline silicon , optoelectronics , composite material , chemistry , crystallography , organic chemistry , engineering

Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ( a -Si:H) with a conductivity up to 5.2 × 10^–3 (Ω cm)^–1 are fabricated; when doping with phosphorus, microcrystalline silicon films ( mc -Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)^–1 are fabricated.

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