Open AccessОсаждение пленок кремния, легированных бором и фосфором газоструйным плазмохимическим методом
Author(s) -
В.Г. Щукин,
Р.Г. Шарафутдинов,
В.О. Константинов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.01.47000.8917
Subject(s) - diborane , materials science , silicon , crystallinity , doping , conductivity , amorphous solid , dopant , boron , amorphous silicon , analytical chemistry (journal) , chemical engineering , crystalline silicon , optoelectronics , composite material , chemistry , crystallography , organic chemistry , engineering
Doped silicon films are fabricated using diborane and phosphine as doping gases by gas-jet plasma-chemical deposition with the application of an electron beam. The influence of the dopant-gas concentration, the addition of a fluorine-containing gas, and the background pressure on the conductivity and crystalline structure of silicon layers is investigated. Boron-doped amorphous films ( a -Si:H) with a conductivity up to 5.2 × 10^–3 (Ω cm)^–1 are fabricated; when doping with phosphorus, microcrystalline silicon films ( mc -Si:H) with a crystallinity up to 70% and conductivity at a level of 1 (Ω cm)^–1 are fabricated.