Open AccessО природе повышения подвижности электронов в канале инверсии у границы раздела кремний-окисел после полевого воздействия
Author(s) -
Е.И. Гольдман,
А.Э. Набиев,
В.Г. Нарышкина,
Г.В. Чучева
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.01.46993.8860
Subject(s) - ionic bonding , depolarization , polarization (electrochemistry) , materials science , ion , condensed matter physics , delocalized electron , ionic conductivity , oxide , semiconductor , impurity , electron , surface conductivity , conductivity , chemistry , optoelectronics , physics , electrolyte , electrode , medicine , organic chemistry , quantum mechanics , metallurgy , endocrinology
The conduction characteristics of the inversion channel of Si-transistor structures after the ionic polarization and depolarization of samples are measured in (0–5)-T transverse magnetic fields at temperatures from 100 to 200 K. After ionic polarization in a strong electric field at 420 K, no less than 6 × 10^13 cm^–2 ions flowed through the oxide. The previously found tenfold increase in the conductivity in the source–drain circuit after the polarization of insulating layers is explained by the formation of a new electron transport path along the surface impurity band, related to delocalized D^– states; these states are generated by neutralized ions located in the insulating layer at its interface with the semiconductor.