О природе повышения подвижности электронов в канале инверсии у границы раздела кремний-окисел после полевого воздействия | Zendy

Е.И. Гольдман | Zendy; А.Э. Набиев | Zendy; В.Г. Нарышкина | Zendy; Г.В. Чучева | Zendy

Open Access

О природе повышения подвижности электронов в канале инверсии у границы раздела кремний-окисел после полевого воздействия

Author(s) -

Е.И. Гольдман,

А.Э. Набиев,

В.Г. Нарышкина,

Г.В. Чучева

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.01.46993.8860

Subject(s) - ionic bonding , depolarization , polarization (electrochemistry) , materials science , ion , condensed matter physics , delocalized electron , ionic conductivity , oxide , semiconductor , impurity , electron , surface conductivity , conductivity , chemistry , optoelectronics , physics , electrolyte , electrode , medicine , organic chemistry , quantum mechanics , metallurgy , endocrinology

The conduction characteristics of the inversion channel of Si-transistor structures after the ionic polarization and depolarization of samples are measured in (0–5)-T transverse magnetic fields at temperatures from 100 to 200 K. After ionic polarization in a strong electric field at 420 K, no less than 6 × 10^13 cm^–2 ions flowed through the oxide. The previously found tenfold increase in the conductivity in the source–drain circuit after the polarization of insulating layers is explained by the formation of a new electron transport path along the surface impurity band, related to delocalized D^– states; these states are generated by neutralized ions located in the insulating layer at its interface with the semiconductor.

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