Open AccessВлияние буферного слоя por-Si на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки
Author(s) -
П. В. Середин,
Д.Л. Голощапов,
D. S. Zolotukhin,
A. S. Lenshin,
А. Н. Лукин,
A. M. Mizerov,
E. V. Nikitina,
И. Н. Арсентьев,
H. Leiste,
Monika Rinke
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.01.46990.8889
Subject(s) - photoluminescence , heterojunction , materials science , substrate (aquarium) , silicon , molecular beam epitaxy , raman spectroscopy , layer (electronics) , analytical chemistry (journal) , epitaxy , crystallography , optoelectronics , nanotechnology , optics , chemistry , oceanography , physics , chromatography , geology
Integrated heterostructures exhibiting a nanocolumnar morphology of the In_ x Ga_1 –_ x N film are grown on a single-crystal silicon substrate ( c -Si(111)) and a substrate with a nanoporous buffer sublayer ( por -Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si buffer layer offer a number of advantages over growth on the c -Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the In_ x Ga_1 –_ x N layer. The growth of In_ x Ga_1 –_ x N nanocolumns on the por -Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por -Si buffer layer is ~25% higher than the emission intensity for the film grown on the c -Si substrate.