Open AccessЗависимость объемных электрофизических свойств мультикремния от параметров разориентации зерен
Author(s) -
С.М. Пещерова,
Е.Б. Якимов,
А.И. Непомнящих,
В.И. Орлов,
О.В. Феклисова,
Л.А. Павлова,
Р.В. Пресняков
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.01.46988.8814
Subject(s) - materials science , impurity , recombination , grain boundary , condensed matter physics , etching (microfabrication) , silicon , electron beam induced current , crystallographic defect , orientation (vector space) , crystallography , optoelectronics , microstructure , metallurgy , geometry , nanotechnology , chemistry , physics , biochemistry , organic chemistry , layer (electronics) , mathematics , gene
The recombination activity of intragrain defects in multicrystalline silicon is investigated by the electron or laser beam induced current methods. The interrelation of the grain orientation with the character of the distribution of intragrain defects (dislocations and impurity inclusions) and their recombination activity is revealed. The defect grain structure is investigated using various etching procedures to reveal the defects. It is shown that the defect density and distribution in the grains depend on their orientation relative the growth axis. Therefore, it is intragrain defects and impurities that are to a large degree responsible for degradation of the nonequilibrium carrier lifetime when compared with grain boundaries.