Исследование влияния легирования железом на люминесценцию монокристаллов селенида цинка
Author(s) -
А.А. Гладилин,
Н.Н. Ильичев,
В.П. Калинушкин,
М.И. Студеникин,
О.В. Уваров,
В.А. Чапнин,
V V Tumorin,
Г.Г. Новиков
Publication year - 2018
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.01.46979.8821
Subject(s) - luminescence , zinc selenide , impurity , materials science , doping , crystal (programming language) , exciton , cadmium selenide , diffusion , analytical chemistry (journal) , optics , optoelectronics , chemistry , condensed matter physics , quantum dot , physics , organic chemistry , computer science , thermodynamics , programming language , chromatography
The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 μm and on the spatial distribution of luminescence centers are studied. By means of two-photon confocal microscopy, planar and volume maps of edge (exciton) and impurity–defect luminescence in the above-indicated spectral range are obtained for both doped and undoped crystals. It is shown that crystal regions containing a high iron concentration exhibit low-intensity luminescence in this range. It is found that, in the process of diffusion, several types of impurity–defect centers distributed in a complex way within the crystal bulk are formed. The nature of these centers is discussed.
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