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Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge -=SUP=-*-=/SUP=-
Author(s) -
В. В. Емцев,
Н.В. Абросимов,
V. V. Kozlovski,
Д.С. Полоскин,
G. A. Oganesyan
Publication year - 2018
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/ftp.2018.13.46869.8970
Subject(s) - group (periodic table) , impurity , irradiation , crystallographic defect , point (geometry) , physics , chemistry , crystallography , mathematics , nuclear physics , quantum mechanics , geometry

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