Open AccessГальванические и емкостные эффекты при компенсации проводимости n-SiC радиационными дефектами
Author(s) -
В. В. Козловский,
А.А. Лебедев,
К.С. Давыдовская,
Ю.В. Любимова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46770.8914
Subject(s) - silicon carbide , materials science , irradiation , diode , electron , capacitance , conduction band , ionization , optoelectronics , band gap , thermal conduction , analytical chemistry (journal) , chemistry , composite material , ion , physics , nuclear physics , organic chemistry , electrode , chromatography
JBS diodes based on 4 H -SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.