Open AccessУстойчивость высоковольтных (1430 В) 4H-SiC p-=SUP=-+-=/SUP=--n-=SUB=-0-=/SUB=--n-=SUP=-+-=/SUP=--диодов к лавинному пробою
Author(s) -
П.А. Иванов,
Т.П. Самсонова,
А.С. Потапов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46769.8903
Subject(s) - diode , overheating (electricity) , materials science , avalanche breakdown , doping , analytical chemistry (journal) , breakdown voltage , atomic physics , optoelectronics , chemistry , voltage , physics , chromatography , quantum mechanics
AbstractThe electrothermal breakdown in high-voltage (1430 V) 4 H -SiC p ^+– n _0– n ^+ diodes with an n _0-base thickness of 7.5 μm, a donor concentration of 8.0 × 10^15 cm^–3, and 4.9 × 10^–4 cm^2 in area are studied. The stability of the diodes to avalanche breakdown is characterized by the maximum energy of a single avalanche current pulse that can be scattered by a diode until its catastrophic destruction. At a pulse duration of ~1 μs, the energy maximum is 1.4 mJ (2.9 J/cm^2). It is shown that diode destruction is caused by local overheating of the diode structure to a temperature of ~1600 K at which the intrinsic carrier concentration becomes higher than the doping donor concentrations in the blocking n _0-type base.