Open AccessБиполярная остаточная фотопроводимость в гетероструктурах HgTe/CdHgTe (013) с двойными квантовыми ямами
Author(s) -
К.Е. Спирин,
Д.М. Гапонова,
К.В. Маремьянин,
В.В. Румянцев,
В.И. Гавриленко,
Н.Н. Михайлов,
С.А. Дворецкий
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46761.41
Subject(s) - photoconductivity , optoelectronics , residual , materials science , heterojunction , wavelength , character (mathematics) , mathematics , geometry , algorithm
The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.