Биполярная остаточная фотопроводимость в гетероструктурах HgTe/CdHgTe (013) с двойными квантовыми ямами | Zendy

К.Е. Спирин | Zendy; Д.М. Гапонова | Zendy; К.В. Маремьянин | Zendy; В.В. Румянцев | Zendy; В.И. Гавриленко | Zendy; Н.Н. Михайлов | Zendy; С.А. Дворецкий | Zendy

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Биполярная остаточная фотопроводимость в гетероструктурах HgTe/CdHgTe (013) с двойными квантовыми ямами

Author(s) -

К.Е. Спирин,

Д.М. Гапонова,

К.В. Маремьянин,

В.В. Румянцев,

В.И. Гавриленко,

Н.Н. Михайлов,

С.А. Дворецкий

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.12.46761.41

Subject(s) - photoconductivity , optoelectronics , residual , materials science , heterojunction , wavelength , character (mathematics) , mathematics , geometry , algorithm

The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.

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