Open AccessФотоприемники с активной областью InGaAs и метаморфным буферным слоем InGaP, выращенные на подложках GaAs
Author(s) -
I. V. Samartsev,
С. М. Некоркин,
Б. Н. Звонков,
В.Я. Алешкин,
А. А. Дубинов,
И.Ю. Пашенькин,
Н. В. Дикарева,
A. B. Chigineva
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46757.36
Subject(s) - photodiode , metalorganic vapour phase epitaxy , optoelectronics , dark current , materials science , substrate (aquarium) , wavelength , layer (electronics) , epitaxy , gallium arsenide , chemical vapor deposition , photodetector , nanotechnology , oceanography , geology
The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.