Open AccessПрименение компенсирующих слоев GaAsP для роста лазерных гетероструктур с квантовыми ямами InGaAs/GaAs, излучающих на длинах волн больше 1100 нм, на искусственных подложках Ge/Si
Author(s) -
Н.В. Байдусь,
В.Я. Алешкин,
А. А. Дубинов,
Z. F. Krasilnik,
К.Е. Кудрявцев,
С. М. Некоркин,
А. В. Новиков,
Андрей Васильевич Рыков,
D. G. Reunov,
М. В. Шалеев,
П.А. Юнин,
Д.В. Юрасов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46754.33
Subject(s) - epitaxy , materials science , optoelectronics , quantum well , wavelength , layer (electronics) , gallium arsenide , germanium , laser , optics , silicon , nanotechnology , physics
tressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.