Open AccessОсобенности поведения МДП мемристоров с нанослоем Si-=SUB=-3-=/SUB=-N-=SUB=-4-=/SUB=-, изготовленных на основе проводящей подложки Si
Author(s) -
С. В. Тихов,
О. Н. Горшков,
И. Н. Антонов,
D. I. Tetelbaum,
А. Н. Михайлов,
А. И. Белов,
А. И. Морозов,
Panagiotis Karakolis,
P. Dimitrakis
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46753.32
Subject(s) - capacitor , materials science , semiconductor , memristor , optoelectronics , doping , silicon , surface states , current density , insulator (electricity) , electrical engineering , surface (topology) , voltage , geometry , mathematics , physics , quantum mechanics , engineering
AbstractThe effect of the material of the metal plates (Au, Ta, W) and exposure to a high-power blue laser on the memristive characteristics of metal–insulator–semiconductor (MIS) capacitors with a Si_3N_4 film 6 nm thick fabricated on the basis of n ^+-Si is studied. It is shown that bipolar switching by the current appears only in capacitors with Au. The causes of the absence of bipolar switching in capacitors with Ta and W are explained. The switching of capacitors with Ta by the current and light and the photomemory effect are detected. It is shown that, despite the high doping level of the semiconductor substrate, it decreases the MIS memristor response rate due to a high density of surface states localized at the Si_3N_4/ n ^+-Si interface. However, illumination allows a significant increase in the response rate due to a decrease in the semiconductor resistivity. The surface state densities are determined. To improve the frequency characteristics of MIS memristors, it is necessary to achieve a low surface state density.