Open AccessЭлектрическая перестройка усиления терагерцового излучения в периодической плазмонной графеновой структуре с инжекцией носителей заряда
Author(s) -
О В Полищук,
Д В Фатеев,
В В Попов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.12.46752.31
Subject(s) - terahertz radiation , plasmon , graphene , fermi energy , fermi level , materials science , optoelectronics , range (aeronautics) , population , nanoscopic scale , amplifier , condensed matter physics , physics , electron , nanotechnology , quantum mechanics , demography , cmos , sociology , composite material
The dependence of the plasmon terahertz resonant frequency in the generation mode on the quasi-Fermi energy in the active (ungated) region of graphene with an inverse charge carrier population and on the Fermi energy in the gated p - and n -type regions in a periodic p – i – n structure based on graphene with injection pumping is theoretically investigated. It is shown that electrically frequency-tunable nanoscale plasmon graphene amplifiers and generators operating in a broad terahertz frequency range at room temperature can be designed.