Open AccessИсследование анизотропии структурных свойств слоев (0001)GaN, выращенных методом МОГФЭ на a-срезе сапфира (1120)
Author(s) -
П.А. Юнин,
Ю Н Дроздов,
O. I. Khrykin,
В. А. Григорьев
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.11.46587.09
Subject(s) - sapphire , metalorganic vapour phase epitaxy , materials science , bar (unit) , epitaxy , anisotropy , gallium nitride , heterojunction , condensed matter physics , thermoelastic damping , crystallography , optoelectronics , optics , chemistry , composite material , laser , physics , thermodynamics , layer (electronics) , thermal , meteorology
The structural properties of GaN(0001) heteroepitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) on a -plane (11 $$\bar {2}$$ 0) sapphire substrates are investigated by X-ray diffractometry. Anisotropy of the rocking-curve width for the symmetric (0004) and asymmetric {11 $$\bar {2}$$ 4} and {10 $$\bar {1}$$ 5} reflections of gallium nitride upon rotation of the sample is observed. A comparison of the anisotropy of the rocking-curve width for GaN(0001)/Al_2O_3(11 $$\bar {2}$$ 0) layers with two different variants of in-plane orientation relationships suggests that the anisotropy of the structural properties is independent of the thermoelastic stress arising upon cooling the heterostructure.