Open AccessПрименение локально-неравновесной диффузионно-дрейфовой модели Каттанео-Вернотта для описания релаксации фототока в диодных структурах при воздействии субпикосекундных импульсов ионизирующих излучений
Author(s) -
А.С. Пузанов,
С.В. Оболенский,
В.А. Козлов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.11.46586.08
Subject(s) - non equilibrium thermodynamics , relaxation (psychology) , schottky diode , excitation , ionization , transient (computer programming) , physics , electron , momentum (technical analysis) , atomic physics , impact ionization , plasma , computational physics , materials science , diode , optoelectronics , ion , nuclear physics , thermodynamics , quantum mechanics , computer science , psychology , social psychology , finance , economics , operating system
The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.