Open AccessXXII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 12-15 марта 2018 г. Расчет состояний многозарядных примесно-дефектных центров в эпитаксиальных слоях Hg-=SUB=-1-x-=/SUB=-Cd-=SUB=-x-=/SUB=-Te
Author(s) -
Дмитрий Викторович Козлов,
В.В. Румянцев,
С. В. Морозов,
А. М. Кадыков,
М.А. Фадеев,
H.-W. Hübers,
В.И. Гавриленко
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.11.46579.01
Subject(s) - valence (chemistry) , impurity , acceptor , photoluminescence , conduction band , spectral line , epitaxy , ionization energy , ionization , crystallography , valence band , materials science , chemistry , atomic physics , band gap , analytical chemistry (journal) , condensed matter physics , ion , physics , nanotechnology , optoelectronics , organic chemistry , layer (electronics) , quantum mechanics , astronomy , chromatography , electron
A method for calculating the states of multivalent donors and acceptors in Hg_1 –_ x Cd_ x Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg_1 –_ x Cd_ x Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg_1 –_ x Cd_ x Te films.