Open AccessВлияние конструкции эпитаксиальной структуры и параметров роста на характеристики метаморфных лазеров оптического диапазона 1.46 мкм на основе квантовых точек на положках GaAs
Author(s) -
М.В. Максимов,
А.М. Надточий,
Ю.М. Шерняков,
А.С. Паюсов,
А.П. Васильев,
В.М. Устинов,
А.А. Сeрин,
Н.Ю. Гордеев,
А.Е. Жуков
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46460.8883
Subject(s) - laser , superlattice , annealing (glass) , optoelectronics , materials science , buffer (optical fiber) , optics , physics , electrical engineering , composite material , engineering
The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In_0.4Ga_0.6As/In_0.2Ga_0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In_0.2Ga_0.8As/In_0.2Al_0.3Ga_0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm^–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.