Open AccessВлияние низкодозного протонного облучения на характеристики инжекционных диодов на основе 4H-SiC
Author(s) -
П. А. Иванов,
А. С. Потапов,
М.Ф. Кудояров,
T. P. Samsonova
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46459.8863
Subject(s) - irradiation , proton , materials science , silicon carbide , diode , capacitance , range (aeronautics) , diffusion capacitance , analytical chemistry (journal) , voltage , charge carrier , atomic physics , optoelectronics , chemistry , electrical engineering , nuclear physics , electrode , composite material , physics , chromatography , engineering
The effect of low-dose proton irradiation (irradiation dose 10^10–1 . 8 × 10^11 cm^–2) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4 H -SiC p – n _ o junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p – n _ o junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).