Open AccessОпределение концентрации водорода по фотоэдс МДП структур Pd-оксид-InP
Author(s) -
Е. А. Гребенщикова,
Х.М. Салихов,
V. G. Sidorov,
V. A. Shutaev,
Ю.П. Яковлев
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46458.8854
Subject(s) - hydrogen , nitrogen , palladium , oxide , materials science , analytical chemistry (journal) , anode , chemistry , inorganic chemistry , electrode , metallurgy , organic chemistry , catalysis
The photovoltage of a metal–insulator–semiconductor structure (Pd–anodic oxide–InP) is studied in relation to the hydrogen concentration in the range 0 . 1–100 vol % in a nitrogen–hydrogen gas mixture. It is shown that, under simultaneous exposure of the structure to light and hydrogen, the photovoltage decay rate and the hydrogen concentration are exponentially related to each other: N _H = a exp( bS ). Here, N _H is the hydrogen concentration (vol %) in the nitrogen–hydrogen mixture. S = dU / dt |_ t _= 0 is the rate at which the signal U changes in the initial portion of the photovoltage decay, beginning from the instant at which the structure is brought into contact with the gas mixture. a and b are constants dependent on the thicknesses of the palladium layer and anodic oxide film on InP.