Open AccessАнализ особенностей деградации, вызываемой горячими носителями, в транзисторах с каналом в форме плавника
Author(s) -
A. A. Makarov,
С.Э. Тягинов,
B. Kaczer,
Markus Jech,
Ana Carolina da Matta Chasin,
Alexander Grill,
Geert Hellings,
М.И. Векслер,
Dimitri Linten,
Tibor Grasser
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46457.8820
Subject(s) - planar , materials science , transistor , degradation (telecommunications) , boltzmann equation , dissociation (chemistry) , semiconductor device , channel (broadcasting) , optoelectronics , field effect transistor , semiconductor , activation energy , chemistry , electrical engineering , nanotechnology , physics , computer science , thermodynamics , layer (electronics) , engineering , computer graphics (images) , voltage
For the first time, hot-carrier degradation (HCD) is simulated in non-planar field-effect transistors with a fin-shaped channel (FinFETs). For this purpose, a physical model considering single-carrier and multiple-carrier silicon–hydrogen bond breaking processes and their superpositions is used. To calculate the bond-dissociation rate, carrier energy distribution functions are used, which are determined by solving the Boltzmann transport equation. A HCD analysis shows that degradation is localized in the channel region adjacent to the transistor drain in the top channel-wall region. Good agreement between the experimental and calculated degradation characteristics is achieved with the same model parameters which were used for HCD reproduction in planar short-channel transistors and high-power semiconductor devices.