Open AccessИзучение влияния временных характеристик модулированной DC-плазмы с (SiH-=SUB=-4-=/SUB=--Ar-O-=SUB=-2-=/SUB=-)-газовой фазой на рост ncl-Si в матрице a-SiO-=SUB=-x-=/SUB=-:H (C-=SUB=-O-=SUB=-2-=/SUB=--=/SUB=-=15.5 мол%)
Author(s) -
Ю.К. Ундалов,
Е. И. Теруков,
И. Н. Трапезникова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46453.8838
Subject(s) - nanoclusters , photoluminescence , analytical chemistry (journal) , amorphous solid , materials science , silicon , amorphous silicon , crystalline silicon , crystallography , chemistry , nanotechnology , optoelectronics , chromatography
The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a -SiO_ x :H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescence spectra. DC-plasma modulation consists in repeated ( n = 180) switching off and on of the magnetron magnet coil with various time combinations, t _off = 1, 2, 5, 10, 15 s and t _on = 5, 10, 15 s, respectively, at a fixed oxygen concentration ( $${{C}_\text{O}}}_{{\text{2$$ = 15.5 mol %) in a (SiH_4 + Ar + О_2) gas mixture. The positive effect of self-induction on the formation of both the amorphous matrix and silicon nanoclusters is confirmed. The largest values of x in a -SiO_ x :H and photoluminescence intensity are observed in the case of the combination of prolonged plasma residence in the working state ( t _on = 10–15 s) and the maximum magnetic-field strength. The effect of t _off on the processes of the formation of both the a -SiO_ x :H matrix and silicon nanoclusters is also noted.