Open AccessРекомбинация в GaAs p-i-n-структурах с InGaAs квантово-размерными объектами: моделирование и закономерности
Author(s) -
M. A. Mintairov,
V. V. Evstropov,
S. A. Mintairov,
R. A. Salii,
М. Z. Shvarts,
Н.А. Калюжный
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46451.8878
Subject(s) - recombination , saturation current , optoelectronics , open circuit voltage , depletion region , gallium arsenide , voltage , materials science , physics , condensed matter physics , chemistry , semiconductor , quantum mechanics , biochemistry , gene
Photovoltaic structures on the basis of GaAs p – i – n junctions with a different number of In_0.4Ga_0.6As layers in the space-charge region forming quantum-confined objects are experimentally and theoretically investigated. For all structures, the dependences of the open-circuit voltage on the solar-irradiation concentration are analyzed. It is shown that the implantation of quantum objects leads to the dominance of recombination in them over recombination in the matrix, which manifests itself in a drop in the open-circuit-voltage. An increase in the number of In_0.4Ga_0.6As layers leads to a proportional increase in the recombination rate, which is expressed in a proportional increase in the “saturation” current and corresponds to the model proposed in the study.