Open AccessФормирование спектров люминесценции, интенсивность излучения в УФ и видимой областях структур n-ZnO/p-GaN, n-ZnO/p-ZnO при нанесении пленок ZnO методом высокочастотного магнетронного распыления
Author(s) -
М. М. Мездрогина,
А.Я. Виноградов,
Ю.В. Кожанова
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.10.46449.8798
Subject(s) - photoluminescence , materials science , electroluminescence , spectral line , exciton , recombination , sputter deposition , impurity , emission spectrum , optoelectronics , zinc , spontaneous emission , wide bandgap semiconductor , cavity magnetron , sputtering , thin film , chemistry , nanotechnology , optics , condensed matter physics , physics , metallurgy , laser , biochemistry , organic chemistry , layer (electronics) , astronomy , gene
AbstractThe emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra ( T = 300 K) of n -ZnO/ p -GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n -ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n -ZnO/ p -ZnO structures ( T = 300 K).