Формирование спектров люминесценции, интенсивность излучения в УФ и видимой областях структур n-ZnO/p-GaN, n-ZnO/p-ZnO при нанесении пленок ZnO методом высокочастотного магнетронного распыления

The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra ( T  = 300 K) of n -ZnO/ p -GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n -ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n -ZnO/ p -ZnO structures ( T = 300 K).