Open AccessТранспорт и фоточувствительность в структурах: композитный слой из наночастиц кремния и золота на p-Si
Author(s) -
М.П. Тепляков,
O. S. Ken,
Д.Н. Горячев,
O. M. Sreseli
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46232.8852
Subject(s) - photosensitivity , materials science , silicon , composite number , layer (electronics) , conductivity , current (fluid) , optoelectronics , colloidal gold , composite material , nanotechnology , nanoparticle , chemistry , electrical engineering , engineering
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p -type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.