Open AccessВлияние высокодозной имплантации углерода на фазовый состав, морфологию и автоэмиссионные свойства кристаллов кремния
Author(s) -
Р.К. Яфаров
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46230.8691
Subject(s) - materials science , wafer , annealing (glass) , silicon , conductivity , electrical resistivity and conductivity , diamond , ion implantation , morphology (biology) , irradiation , field electron emission , optoelectronics , analytical chemistry (journal) , ion , composite material , chemistry , electrical engineering , electron , physics , organic chemistry , chromatography , quantum mechanics , biology , nuclear physics , genetics , engineering
The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.