Open AccessРасчет влияния плотности ионного тока и температуры на кинетику накопления точечных дефектов при облучении кремния легкими ионами
Author(s) -
Е.В. Окулич,
В.И. Окулич,
D. I. Tetelbaum
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46228.8720
Subject(s) - diffusion , irradiation , ion , materials science , interpretation (philosophy) , point (geometry) , crystallographic defect , atomic physics , statistical physics , thermodynamics , chemistry , physics , condensed matter physics , computer science , nuclear physics , mathematics , geometry , programming language , organic chemistry
Numerical calculations of the accumulation kinetics of point defects—vacancies and divacancies—under the irradiation of Si with ions having masses of M _1 ≤ 31 amu and energies of E ≤ 100 keV under various irradiation conditions are performed. The previously proposed diffusion-coagulation model is used without application of the “weak diffusion” approximation, which was performed during its analytical implementation. The main peculiarities of the dependences of the concentrations of vacancies and divacancies on the dose, ion-current density, and temperature under irradiation are analyzed. A physical interpretation of these results is given. The developed computing complex is rather flexible and makes it possible to analyze the influence of model input parameters by means of their variation and include additional processes into consideration if necessary.