Open AccessСнижение порога генерации с помощью легирования в лазерах среднего инфракрасного диапазона на основе HgCdTe с квантовыми ямами HgTe
Author(s) -
А. А. Дубинов,
В.Я. Алешкин,
С.В. Морозов
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46159.8833
Subject(s) - quantum well , lasing threshold , optoelectronics , laser , wavelength , infrared , doping , materials science , layer (electronics) , optics , physics , nanotechnology
The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce δ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the δ layer of 4 × 10^10 cm^–2 and an operating temperature of >40 K, the lasing threshold at a wavelength of 20 μm can be lowered more than twofold.