Снижение порога генерации с помощью легирования в лазерах среднего инфракрасного диапазона на основе HgCdTe с квантовыми ямами HgTe | Zendy

А. А. Дубинов | Zendy; В.Я. Алешкин | Zendy; Sergii Morozov | Zendy

Open Access

Снижение порога генерации с помощью легирования в лазерах среднего инфракрасного диапазона на основе HgCdTe с квантовыми ямами HgTe

Author(s) -

А. А. Дубинов,

В.Я. Алешкин,

Sergii Morozov

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.09.46159.8833

Subject(s) - quantum well , lasing threshold , optoelectronics , laser , wavelength , infrared , doping , materials science , layer (electronics) , optics , physics , nanotechnology

The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce δ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the δ layer of 4 × 10^10 cm^–2 and an operating temperature of >40 K, the lasing threshold at a wavelength of 20 μm can be lowered more than twofold.

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