Open AccessФотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур
Author(s) -
Е.В. Куницына,
И.А. Андреев,
Г.Г. Коновалов,
Э.В. Иванов,
А.А. Пивоварова,
Н.Д. Ильинская,
Ю.П. Яковлев
Publication year - 2018
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2018.09.46158.8830
Subject(s) - photodiode , dark current , materials science , capacitance , optoelectronics , sensitivity (control systems) , current density , analytical chemistry (journal) , photodetector , chemistry , physics , electrode , quantum mechanics , chromatography , electronic engineering , engineering
GaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10^15 cm^–3. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity S _λ = 0 . 95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10^–3 A/cm^2 at U _rev = 1 . 0–2 . 0 V, and high-speed performance (response time 5–10 ns).