Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур | Zendy

Е.В. Куницына | Zendy; И.А. Андреев | Zendy; Г.Г. Коновалов | Zendy; Э.В. Иванов | Zendy; А.А. Пивоварова | Zendy; Н.Д. Ильинская | Zendy; Ю.П. Яковлев | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

Author(s) -

Е.В. Куницына,

И.А. Андреев,

Г.Г. Коновалов,

Э.В. Иванов,

А.А. Пивоварова,

Н.Д. Ильинская,

Ю.П. Яковлев

Publication year - 2018

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2018.09.46158.8830

Subject(s) - photodiode , dark current , materials science , capacitance , optoelectronics , sensitivity (control systems) , current density , analytical chemistry (journal) , photodetector , chemistry , physics , electrode , quantum mechanics , chromatography , electronic engineering , engineering

GaSb/GaAlAsSb uncooled photodiodes for the 1 . 1–1 . 85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10^15 cm^–3. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity S _λ = 0 . 95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10^–3 A/cm^2 at U _rev = 1 . 0–2 . 0 V, and high-speed performance (response time 5–10 ns).

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research